The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs

Saved in:
Bibliographic Details
Published in:Semiconductor science and technology 2024-04, Vol.39 (4)
Main Authors: Deng, Youcai, Chen, Jinlan, Li, Saijun, Huang, He, Liu, Zhong, Yan, Zijun, Lai, Shouqiang, Zheng, Lijie, Yang, Tianzhi, Chen, Zhong, Wu, Tingzhu
Format: Article
Language:English
Subjects:
ALD
micro-LED
optoelectrical performance
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ad2b0a