Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes

We present the numerical effect of the polarity of the built-in field on the GaN-based light-emitting diodes (LEDs). The results show that, in comparison to the Ga-polar device, the p-down N-polar device shows significant improvement in electronic and optical characteristics. In N-LED, the turn-on v...

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Bibliographic Details
Published in:Physica scripta 2019-10, Vol.94 (10), p.105808
Main Authors: Usman, Muhammad, Mushtaq, Urooj, Munsif, Munaza, Anwar, Abdur-Rehman, Kamran, Muhammad
Format: Article
Language:English
Subjects:
Ga-polar
light-emitting diodes
N-polar
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Summary:We present the numerical effect of the polarity of the built-in field on the GaN-based light-emitting diodes (LEDs). The results show that, in comparison to the Ga-polar device, the p-down N-polar device shows significant improvement in electronic and optical characteristics. In N-LED, the turn-on voltage, internal quantum efficiency and radiative recombination rate is improved by 6%, three times at 100 A cm−2 and 194%, respectively. It is shown that the effective barrier heights and energy band offsets are the governing reason behind the significant improvement in N-polar devices.
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/ab28c0