Residual stress, strain and defects: its effect on the band gap of poly-Ge thin film realized on glass via Au induced layer exchange crystallization process

Residual stress in polycrystalline-Ge thin film realized on glass substrate using Au-induced layer exchange crystallization process is evaluated using x-ray diffraction based technique. The measured stress is found to be tensile in nature, from which we delineate and discuss the extrinsic thermal an...

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Bibliographic Details
Published in:Physica scripta 2022-12, Vol.97 (12), p.125830
Main Authors: Singh, Ch Kishan, Mathews, T, Dhara, Sandip
Format: Article
Language:English
Subjects:
band gap narrowing
polycrystalline Ge thin film
residual stress
strain
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Summary:Residual stress in polycrystalline-Ge thin film realized on glass substrate using Au-induced layer exchange crystallization process is evaluated using x-ray diffraction based technique. The measured stress is found to be tensile in nature, from which we delineate and discuss the extrinsic thermal and intrinsic growth stresses. An in-plane biaxial tensile strain ∼0.15% was estimated to be endured by the polycrystalline-Ge thin film. The narrowing effect that such strain and the crystallization or growth-related defects have on the optical energy band gap of the polycrystalline-Ge thin film is elucidated.
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/aca2ef