Carrier density distribution in AlGaAs/GaAs superlattices with different numbers of quantum wells determined by capacitance-voltage profiling

The charge carrier density distribution in uniformly doped AlGaAs/GaAs superlattices with layer thicknesses of 1.5/10 nm and different numbers of quantum wells was studied. Both energy band theory and capacitance–voltage profiling were used to determine the carrier concentration profiles of the stru...

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Bibliographic Details
Published in:Physica scripta 2024-02, Vol.99 (2), p.25951
Main Authors: Vasilkova, E I, Pirogov, E V, Sobolev, M S, Baranov, A I, Gudovskikh, A S, Khabibullin, R A, Bouravleuv, A D
Format: Article
Language:English
Subjects:
AlGaAs/GaAs superlattices
capacitance-voltage profiling
charge carrier distribution
molecular beam epitaxy
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Summary:The charge carrier density distribution in uniformly doped AlGaAs/GaAs superlattices with layer thicknesses of 1.5/10 nm and different numbers of quantum wells was studied. Both energy band theory and capacitance–voltage profiling were used to determine the carrier concentration profiles of the structures. During the analysis of the experimental and simulated capacitance–voltage characteristics, it was found that the maximum electron concentrations increase with an increase in the number of quantum wells from ∼ 7.1 ⋅ 10 16 cm − 3 for three wells to ∼ 9.3 ⋅ 10 16 cm − 3 for 25 wells with an overall superlattice doping level of ∼ 10 17 cm − 3 .
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/ad1cbb