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Analysis on density of states and ION/IOFF ratio of GaN/GaN-graphene nanoribbon tunnel FET for enhanced bio-sensing applications

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Bibliographic Details
Published in:	Physica scripta 2024-12, Vol.99 (12)
Main Authors:	V N, Senthil Kumaran, M, Venkatesh, R, Shreeshayana, Gudur, Manjunath V, P, Parthasarathy
Format:	Article
Language:	English
Subjects:	drain current ferroelectric ferroelectric halo-doped double gate (FHDD) gate voltage graphene heterostructure tunnel field effect transistors (TFETs)
Online Access:	Get full text
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