Analysis on density of states and ION/IOFF ratio of GaN/GaN-graphene nanoribbon tunnel FET for enhanced bio-sensing applications

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Published in:Physica scripta 2024-12, Vol.99 (12)
Main Authors: V N, Senthil Kumaran, M, Venkatesh, R, Shreeshayana, Gudur, Manjunath V, P, Parthasarathy
Format: Article
Language:English
Subjects:
drain current
ferroelectric
ferroelectric halo-doped double gate (FHDD)
gate voltage
graphene
heterostructure
tunnel field effect transistors (TFETs)
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container_issue 12
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container_title Physica scripta
container_volume 99
creator V N, Senthil Kumaran
M, Venkatesh
R, Shreeshayana
Gudur, Manjunath V
P, Parthasarathy
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doi_str_mv 10.1088/1402-4896/ad8c01
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source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects drain current
ferroelectric
ferroelectric halo-doped double gate (FHDD)
gate voltage
graphene
heterostructure
tunnel field effect transistors (TFETs)
title Analysis on density of states and ION/IOFF ratio of GaN/GaN-graphene nanoribbon tunnel FET for enhanced bio-sensing applications
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