Efficient hole extraction by doped-polyaniline/graphene oxide in lead-free perovskite solar cell: a computational study

The intriguing behavior of doped polyanilinine/graphene oxide (PANI/GO) offers a solution to the pivotal problem of device stability against moisture in perovskite solar cell (PSC). Tunable bandgap formation of doped PANI/GO with an absorber layer allows effective flexibility for charge carrier cond...

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Bibliographic Details
Published in:Physica scripta 2025-02, Vol.100 (2), p.25924
Main Authors: Jalaludin, Nabilah Ahmad, Salehuddin, Fauziyah, Rahim, Farah Liyana, Mustafa, Ahmad Nizamuddin, Kaharudin, Khairil Ezwan, Islam, Mohammad Aminul, Amin, Nowshad, Arith, Faiz
Format: Article
Language:English
Subjects:
doped polyaniline/graphene oxide
hole transporting layer
Pb-free
perovskite solar cell
taguchi-based GRA
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Summary:The intriguing behavior of doped polyanilinine/graphene oxide (PANI/GO) offers a solution to the pivotal problem of device stability against moisture in perovskite solar cell (PSC). Tunable bandgap formation of doped PANI/GO with an absorber layer allows effective flexibility for charge carrier conduction and reduced series resistance further boosting the cell performance. Herein, the L 9 Orthogonal Array (OA) Taguchi-based grey relational analysis (GRA) optimization was introduced to intensify the key output responses. Furthermore, this work also delved into incorporating a Pb-free absorber perovskite layer, formamidinium tin triiodide (FASnI 3 ), and concomitantly eluding the environmentally hazardous substance. The numerical optimization supported by statistical analysis is based on experimental data to attain the utmost peak cell efficiency. Taguchi’s L 9 OA-based GRA predictive modeling recorded over one-fold enhancement over experimental results, reaching as high as 20.28% power conversion efficiency (PCE). Despite that, the PCE of the structures is severely affected by interface defects at the electron transport layer/absorber (ETL/Abs) vicinity, which is almost zero at merely 1 × 10 14 cm −2 , manifesting that control measures need to be taken into account. This work deduces the feasibility of ETL/Abs stack structure in replacing the conventional Pb-based perovskite absorber layer, while maximizing the potential use of doped PANI/GO as a hole transport layer (HTL).
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/ada4e8