A novel integrated ultraviolet photodetector based on standard CMOS processProject supported by the National Natural Science Foundation of China (Grant No. 61274043), the Key Project of the Ministry of Education of China (Grant No. 212125), and the State Key Program of the National Natural Science Foundation of China (Grant No. 61233010)

A novel integrated ultraviolet (UV) photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared (IR) photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the i...

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Bibliographic Details
Published in:Chinese physics B 2015-03, Vol.24 (3)
Main Authors: Wang, Han, Jin, Xiang-Liang, Chen, Chang-Ping, Tian, Man-Fang, Zhu, Ke-Han
Format: Article
Language:English
Subjects:
CMOS process
compensating parasitic photocurrent
ultraviolet photodetector
UV selectivity
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Summary:A novel integrated ultraviolet (UV) photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared (IR) photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV-IR photodetector has a maximum spectral responsivity of 0.27 A·W−1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000, which is much higher than that of the single UV photodiode.
ISSN:1674-1056
DOI:10.1088/1674-1056/24/3/038501