Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasersProject supported by the National Natural Science Foundation of China (Grant Nos. 61274046, 61335009, 61201103, and 61320106013) and the National High Technology Research and Development Program of China (Grant No. 2013AA014202)

Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss....

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2015-04, Vol.24 (6)
Main Authors: Tan, Shao-Yang, Zhai, Teng, Zhang, Rui-Kang, Lu, Dan, Wang, Wei, Ji, Chen
Format: Article
Language:English
Subjects:
free carrier absorption
internal loss
semiconductor laser
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.
ISSN:1674-1056
DOI:10.1088/1674-1056/24/6/064211