Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated,and expressions for the electronic states are presented.The system is modeled by considering T = 0 K and also with a single parabolic conduction band,which is...

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Bibliographic Details
Published in:Chinese physics B 2016-11, Vol.25 (11), p.453-460
Main Authors: Munguía-Rodríguez, M, Betancourt-Riera, Ri, Betancourt-Riera, Re, Riera, R, Nieto Jalil, J M
Format: Article
Language:English
Subjects:
electron states
quantum well wires
Raman scattering
selection rules
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Summary:The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated,and expressions for the electronic states are presented.The system is modeled by considering T = 0 K and also with a single parabolic conduction band,which is split into a subband system due to the confinement.The gain and differential cross-section for an electron Raman scattering process are obtained.In addition,the emission spectra for several scattering configurations are discussed,and interpretations of the singularities found in the spectra are given.The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/11/117302