Generation of valley pump currents in siliceneProject supported by the National Natural Science Foundation of China (Grant Nos. 11274059, 11574045, and 11704165)

We propose a workable scheme for generating a bulk valley pump current in a silicene-based device which consists of two pumping regions characterized by time-dependent strain and staggered potentials, respectively. In a one-dimension model, we show that a pure valley current can be generated, in whi...

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Bibliographic Details
Published in:Chinese physics B 2019-01, Vol.28 (1)
Main Authors: Jada Marcellino, John Tombe, Wang, Mei-Juan, Wang, Sa-Ke
Format: Article
Language:English
Subjects:
charge pump
quantization
silicene
valley currents
Online Access:Get full text
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Summary:We propose a workable scheme for generating a bulk valley pump current in a silicene-based device which consists of two pumping regions characterized by time-dependent strain and staggered potentials, respectively. In a one-dimension model, we show that a pure valley current can be generated, in which the two valley currents have the same magnitude but flow in opposite directions. Besides, the pumped valley current is quantized and maximized when the Fermi energy of the system locates in the bandgap opened by the two pumping potentials. Furthermore, the valley current can be finely controlled by tuning the device parameters. Our results are useful for the development of valleytronic devices based on two-dimensional materials.
ISSN:1674-1056
DOI:10.1088/1674-1056/28/1/017204