Enhanced absorption process in the thin active region of GaAs based p–i–n structure Project supported by the National Natural Science Foundation of China (Grant No. 61991441) and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000)

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Bibliographic Details
Published in:Chinese physics B 2021-09, Vol.30 (9)
Main Authors: Yue, Chen, Tang, Xian-Sheng, Li, Yang-Feng, Wang, Wen-Qi, Li, Xin-Xin, Zhang, Jun-Yang, Deng, Zhen, Du, Chun-Hua, Jia, Hai-Qiang, Wang, Wen-Xin, Lu, Wei, Jiang, Yang, Chen, Hong
Format: Article
Language:English
Subjects:
absorption coefficient
p-n junction
photoelectric
Online Access:Get full text
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ISSN:1674-1056
DOI:10.1088/1674-1056/abf10c