Design and research of normally-off β-Ga2O3/4H-SiC heterojunction field effect transistor

Ga2O3 is difficult to achieve p-type doping,which further hinders the development of Ga2O3-based power devices and is not conducive to the development of new devices with high power density and low power consumption.This paper expounds a β-Ga2O3/4H-SiC heterojunction lateral metal-oxide-semiconducto...

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Bibliographic Details
Published in:Chinese physics B 2023-03, Vol.32 (3), p.524-529
Main Authors: Cheng, Meixia, Luan, Suzhen, Wang, Hailin, Jia, Renxu
Format: Article
Language:English
Subjects:
heterojunction
MOSFET
threshold voltage
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Summary:Ga2O3 is difficult to achieve p-type doping,which further hinders the development of Ga2O3-based power devices and is not conducive to the development of new devices with high power density and low power consumption.This paper expounds a β-Ga2O3/4H-SiC heterojunction lateral metal-oxide-semiconductor field-effect transistor(HJFET),which can make better use of the characteristics of PN junction by adding p-doped SiC in the channel region.Compared with the con-ventional devices,the threshold voltage of the heterojunction metal-oxide-semiconductor field-effect transistor(MOSFET)is greatly improved,and normally-off operation is realized,showing a positive threshold voltage of 0.82 V.Meanwhile,the off-state breakdown voltage of the device is up to 1817 V,and the maximum transconductance is 15.3 mS/mm.The optimal PFOM is obtained by simulating the thickness,length and doping of the SiC in each region of the epitaxial layer.This structure provides a feasible idea for high performance β-Ga2O3 MOSFET.
ISSN:1674-1056
DOI:10.1088/1674-1056/aca39c