Design of novel DDSCR with embedded PNP structure for ESD protectionProject supported by the Fundamental Research Funds for the Central Universities (No. JUSRP51323B), the Joint Innovation Project of Jiangsu Province (No. BY2013015-19), the Summit of the Six Top Talents Program of Jiangsu Province (No. DZXX-053), and the Graduate Student Innovation Program for Universities of Jiangsu Province (Nos. KYLX_1119, SJZZ_0148)

A novel dual-directional silicon controlled rectifier (DDSCR) device with embedded PNP structure (DDSCR-PNP) is proposed for electrostatic discharge (ESD) protection, which has greatly reduced latch-up risk owing to the improved holding voltage (Vh). Firstly, the working mechanism of the DDSCR-PNP i...

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Bibliographic Details
Published in:Journal of semiconductors 2015-12, Vol.36 (12)
Main Authors: Bi, Xiuwen, Liang, Hailian, Gu, Xiaofeng, Huang, Long
Format: Article
Language:English
Subjects:
dual-directional silicon controlled rectifier
electrostatic discharge
holding voltage
leakage current
trigger voltage
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Summary:A novel dual-directional silicon controlled rectifier (DDSCR) device with embedded PNP structure (DDSCR-PNP) is proposed for electrostatic discharge (ESD) protection, which has greatly reduced latch-up risk owing to the improved holding voltage (Vh). Firstly, the working mechanism of the DDSCR-PNP is analyzed. The theoretical analysis indicates that the proposed device possesses good voltage clamp ability due to the embedded PNP (PNP_2). Then, experimental devices are fabricated in a 0.35 μm bipolar-CMOS-DMOS process and measured with a Barth 4002 transmission line pulse testing system. The results show that the Vh of DDSCR-PNP is much higher than that of the conventional DDSCR, and can be further increased by adjusting the P well width. However, the reduced leakage current (IL) of the DDSCR-PNP shows obvious fluctuations when the P well width is increased to more than 12 μm. Finally, the factors influencing Vh and IL are investigated by Sentaurus simulations. The results verify that the lateral PNP_2 helps to increase Vh and decrease IL. When the P well width is further increased, the effect of the lateral PNP_2 is weakened, causing an increased IL. The proposed DDSCR-PNP provides an effective and attractive ESD protection solution for high-voltage integrated circuits.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/12/124007