High quality non-rectifying contact of ITO with both Ni and n-type GaAsProject supported by the National Natural Science Foundation (Nos. 61176128, 61376081), the Knowledge Innovation Project of the CAS (No. Y2BAQ11001), and the SINANO SONY Joint Program (Nos. Y1AAQ11002, Y2AAQ11004)

We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32 × 10−4 ·cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model (c-TLM)...

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Bibliographic Details
Published in:Journal of semiconductors 2015-05, Vol.36 (5)
Main Authors: Wang, Qingsong, Masao, Ikeda, Tan, Ming, Dai, Pan, Wu, Yuanyuan, Lu, Shulong, Yang, Hui
Format: Article
Language:English
Subjects:
electron beam evaporation
ITO
ITO/n-GaAs
specific contact resistance
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Summary:We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32 × 10−4 ·cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model (c-TLM) method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81 × 10−6 ·cm2, while that of ITO/n-GaAs is 7 × 10−5 ·cm2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/5/053003