Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxyProject supported by the Chinese National Key Project (No. 2012ZX02502)

A laterally diffused metal-oxide-semiconductor (LDMOS) device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device performance under high frequency. Based upon the device design, radio-frequency (RF) LDMOS tra...

Full description

Saved in:
Bibliographic Details
Published in:Journal of semiconductors 2015-06, Vol.36 (6)
Main Authors: Xu, Xiangming, Huang, Jingfeng, Yu, Han, Qian, Wensheng, Zhou, Zhengliang, Han, Bo, Wang, Yong, Wang, Pengfei, David, Wei Zhang
Format: Article
Language:English
Subjects:
LDMOS
reliability
RF power
ruggedness
semiconductor device
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A laterally diffused metal-oxide-semiconductor (LDMOS) device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device performance under high frequency. Based upon the device design, radio-frequency (RF) LDMOS transistors for GSM (global system for mobile communication) application have been fabricated by using 0.35 μm CMOS technologies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The RF linear gain is over 20 dB and the power added efficiency (PAE) is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 : 1 voltage standing wave ratio (VSWR) load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point (P10dB). The device ruggedness has been remarkably improved by using the proposed device structure.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/6/064013