Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingersProject supported by the National Natural Science Foundation of China (No. 61204086)

This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors (HEMTs) at different numbers of gate fingers. Scalable small-signal models are extracted to analyze the relationship between each model's parameters and the number of device's gate fingers. The si...

Full description

Saved in:
Bibliographic Details
Published in:Journal of semiconductors 2016-06, Vol.37 (6)
Main Authors: Tiwat, Pongthavornkamol, Guoguo, Liu, Tingting, Yuan, Yingkui, Zheng, Xinyu, Liu
Format: Article
Language:English
Subjects:
AlGaN/GaN HEMT
gate fingers
load-pull measurement
small-signal model
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors (HEMTs) at different numbers of gate fingers. Scalable small-signal models are extracted to analyze the relationship between each model's parameters and the number of device's gate fingers. The simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 GHz. The dependency between the number of device's gate fingers and load-pull characterization is presented.
ISSN:1674-4926
DOI:10.1088/1674-4926/37/6/064008