High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layerProject supported by the National Natural Science Foundation of China (Nos. 61504125, 61474101, 61106130 61076120, 61505181), and the Natural Science Foundation of Jiangsu Province of China (Nos. BK20131072, BE2012007, BK2012516)

• Published in: Journal of semiconductors 2016-06, Vol.37 (6)
• Main Authors: Tao, Gao, Ruimin, Xu, Kai, Zhang, Yuechan, Kong, Jianjun, Zhou, Cen, Kong, Xinxin, Yu, Xun, Dong, Tangsheng, Chen
• Format: Article
• Language: English
• Subjects: AlGaN/GaN; atomic layer deposition (ALD); enhancement-mode (E-mode); stack gate dielectrics
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/37/6/064013

We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al2O3/LaxAl1−xO 3/Al2O3 stack (x≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.