Theoretical study of a group IV p-i-n photodetector with a flat and broad response for visible and infrared detection

We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p-i-n photodetector with a flat response based on modulating thickness of the layers in the active region. The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm. This structure is suitable for...

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Bibliographic Details
Published in:Journal of semiconductors 2020-12, Vol.41 (12), p.122402-50
Main Authors: Wu, Jinyong, Huang, Donglin, Ye, Yujie, Wang, Jianyuan, Huang, Wei, Li, Cheng, Chen, Songyan, Ke, Shaoying
Format: Article
Language:English
Subjects:
broad response
dark current density
flat response
graded-SiGe
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Summary:We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p-i-n photodetector with a flat response based on modulating thickness of the layers in the active region. The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm. This structure is suitable for silicon-based epitaxial growth. Annealing is technically applied to form the graded-SiGe. The photodetector reaches a cut-off wavelength at ~2300 nm and a low dark-current density under 3 V reverse bias about 0.17 mA/cm2 is achieved theoretical at room temperature. This work is of great significance for silicon-based detection and communication, from visible to infrared.
ISSN:1674-4926
2058-6140
DOI:10.1088/1674-4926/41/12/122402