Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I-V characteristics analysis, and radio frequency performances measurements. It is found that a sample with...

Full description

Saved in:
Bibliographic Details
Published in:Journal of semiconductors 2020-12, Vol.41 (12), p.122801-85
Main Authors: Zhou, Rui, Yu, Cui, Zhou, Chuangjie, Guo, Jianchao, He, Zezhao, Wang, Yanfeng, Qiu, Feng, Wang, Hongxing, Cai, Shujun, Feng, Zhihong
Format: Article
Language:English
Subjects:
defect
diamond
power density
transistor
trap
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I-V characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.
ISSN:1674-4926
2058-6140
DOI:10.1088/1674-4926/41/12/122801