Investigation of multimodality effect in quantum dots InGaAs/GaAs grown by MOVPE

Self-assembled InGaAs quantum dots with In content 80% grown on vicinal GaAs substrates by MOVPE method have been investigated by photoluminescence technique in a wide range of temperatures and excitation densities. Multimodality of distribution of size and (or) shape in array of vertically stacked...

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Bibliographic Details
Published in:Journal of physics. Conference series 2018-06, Vol.1038 (1), p.12082
Main Authors: Kosarev, I S, Nadtochiy, A M, Salii, R A, Kalyuzhnyy, N A
Format: Article
Language:English
Subjects:
Gallium arsenide
Indium gallium arsenides
Metalorganic chemical vapor deposition
Photoluminescence
Physics
Quantum dots
Self-assembly
Substrates
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Summary:Self-assembled InGaAs quantum dots with In content 80% grown on vicinal GaAs substrates by MOVPE method have been investigated by photoluminescence technique in a wide range of temperatures and excitation densities. Multimodality of distribution of size and (or) shape in array of vertically stacked quantum dots synthesized under different growth conditions as well as in a single layer structure was found on the ground of appearance of a set of peaks in photoluminescence spectra at lowered temperatures. Influence of growth conditions on density and radiation wavelength of quantum dot modes has been analyzed. Investigation of photoluminescence of samples as a function of temperatures has allowed determining activation energies of three channels of the losses that were attributed to different modes of quantum dots.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1038/1/012082