Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Mobility spectrum analysis and step-by-step chemical etching-based depth profiling have been employed for establishing distribution profiles of radiation-induced donor defects in an arsenic-implanted HgCdTe film grown by molecular beam epitaxy. Three electron species associated with specific defect...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2018-11, Vol.1115 (3), p.32063
Main Authors: Voitsekhovskii, A V, Izhnin, I I, Syvorotka, I I, Korotaev, A G, Mynbaev, K D, Varavin, V S, Dvoretsky, S A, Marin, D V, Mikhailov, N N, Remesnik, V G, Yakushev, M V
Format: Article
Language:English
Subjects:
Arsenic
Chemical etching
Defects
Depth profiling
Epitaxial growth
Hall effect
Mercury cadmium tellurides
Molecular beam epitaxy
Radiation
Radiation effects
Spectrum analysis
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Mobility spectrum analysis and step-by-step chemical etching-based depth profiling have been employed for establishing distribution profiles of radiation-induced donor defects in an arsenic-implanted HgCdTe film grown by molecular beam epitaxy. Three electron species associated with specific defect layers in implanted material were detected, and defects responsible for these species were identified. The advantage of mobility spectrum analysis methodology over the use of traditional differential Hall effect-measurements with a single value of magnetic field was demonstrated for the ion-implanted HgCdTe.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1115/3/032063