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Electron diffusivity measurements of VN superconducting single-photon detectors

The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41...

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Bibliographic Details
Published in:Journal of physics. Conference series 2018-12, Vol.1124 (5), p.51032
Main Authors: Romanov, N R, Zolotov, P I, Vakhtomin, Yu B, Divochiy, A V, Smirnov, K V
Format: Article
Language:English
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Summary:The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm - 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1124/5/051032