A heterostructure for resonant-cavity GaAs p-i-n photodiode with 840-860 nm wavelength

A heterostructure for resonant-cavity p-i-n photodiode was grown by molecular beam epitaxy and consists of light-absorbing GaAs i-layer between p- and n-emitter layers of AlGaAs. The heterostructure employs Bragg reflector with more than 95 % reflection coefficient at 840-860 nm wavelength. Photolit...

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Bibliographic Details
Published in:Journal of physics. Conference series 2019-06, Vol.1236 (1), p.12071
Main Authors: Rochas, S S, Kolodeznyi, E S, Kozyreva, O A, Voropaev, K O, Sudas, D P, Novikov, I I, Egorov, A Yu
Format: Article
Language:English
Subjects:
Bragg reflectors
Chip formation
Dark current
Electromagnetic absorption
Emitters
Epitaxial growth
Heterostructures
Molecular beam epitaxy
Optoelectronics
P-i-n photodiodes
Photolithography
Physics
Reflectance
Thermal simulation
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Summary:A heterostructure for resonant-cavity p-i-n photodiode was grown by molecular beam epitaxy and consists of light-absorbing GaAs i-layer between p- and n-emitter layers of AlGaAs. The heterostructure employs Bragg reflector with more than 95 % reflection coefficient at 840-860 nm wavelength. Photolithographic masks for chip fabrication were designed using optoelectronic and thermal phenomena simulation. Fabricated chips exhibit a bandwidth of 10 GHz and low dark current.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1236/1/012071