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Resonant Bragg reflection of light from ZnTe-based structures with embedded CdTe monolayers

An electrodynamic model describing Bragg reflection of light from semiconductor structures with ultrathin planar layers embedded in bulk material matrix is developed. The layers are assumed to exhibit resonant optical properties in a spectral range near the short-wavelength bandgap edge of bulk mate...

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Bibliographic Details
Published in:Journal of physics. Conference series 2019-11, Vol.1400 (6), p.66001
Main Authors: Ukleev, T A, Reznitsky, A N, Sel'kin, A V
Format: Article
Language:English
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Summary:An electrodynamic model describing Bragg reflection of light from semiconductor structures with ultrathin planar layers embedded in bulk material matrix is developed. The layers are assumed to exhibit resonant optical properties in a spectral range near the short-wavelength bandgap edge of bulk material. Model calculations of the reflection spectra are performed at typical parameter values of the resonant Bragg structure containing monolayers of CdTe in bulk ZnTe.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1400/6/066001