GaN nanowires/ p-Si interface passivation by hydrogen plasma treatment

The effect of hydrogen plasma treatment on the electrical and optical properties of GaN NWs/Si based vertical hetero structures synthesized by the method of plasma molecular beam epitaxy is studied. The effect of treatment has been carefully studied by variation of the passivation duration. Measurem...

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-05, Vol.1537 (1), p.12012
Main Authors: Yu Shugurov, K, Mozharov, A M, Bolshakov, A D, Fedorov, V V, Uvarov, A V, Kudryashov, D A, Yu Mikhailovskii, V, Cirlin, G E, Mukhin, I S
Format: Article
Language:English
Subjects:
Electric contacts
Electrical properties
Electron beam induced current
Gallium nitrides
Hydrogen plasma
Molecular beam epitaxy
Nanowires
Optical properties
Passivity
Potential barriers
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Summary:The effect of hydrogen plasma treatment on the electrical and optical properties of GaN NWs/Si based vertical hetero structures synthesized by the method of plasma molecular beam epitaxy is studied. The effect of treatment has been carefully studied by variation of the passivation duration. Measurements of the electron beam-induced current (EBIC) technique showed the absence of potential barriers between the active parts of the diode and the contacts, which indicates the ohmic behavior of the latter. The current - voltage characteristics show that hydrogen can efficiently passivate recombination centers at the GaN NWs/Si heterointerface. It is established that the optimal passivation duration, providing improved electrical properties, is 10 minutes in the adopted passivation modes. It is shown that a longer treatment causes a deterioration in electrical properties.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1537/1/012012