Wet chemical etching of GaN or InGaN nanowires on Si substrate for micro and nano-devises fabrication

In this work, it is experimentally shown that the etching of GaN or InGaN NWs in the KOH solution allows managing the morphology and optical properties of the nanowires array. Thinning rate of GaN nanowires is 5 times slower than the rate for InGaN nanowires along semi-polar and non-polar direction...

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-12, Vol.1695 (1), p.12047
Main Authors: Lendyashova, V V, Kotlyar, K P, Reznik, R R, Berezovskaya, T N, Nikitina, E V, Soshnikov, I P, Cirlin, G E
Format: Article
Language:English
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Summary:In this work, it is experimentally shown that the etching of GaN or InGaN NWs in the KOH solution allows managing the morphology and optical properties of the nanowires array. Thinning rate of GaN nanowires is 5 times slower than the rate for InGaN nanowires along semi-polar and non-polar direction for nanowires with Ga-polar crystal structure. The diameter of the InGaN NWs decreases from 200-100 to 30-40 nm. After etching process, the intensity photoluminescence (PL) of nanowires and uniformity PL signal at all sample area increase.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1695/1/012047