Application of selective contacts for study of silicon surface degradation

In this work an application of selective contacts p-Si/MoOx for evaluation of silicon surface degradation is shown. Using a method of I-V measurements the effect of silicon surface degradation during SiO2 magnetron deposition was demonstrated.

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-12, Vol.1695 (1), p.12084
Main Authors: Kudryashov, D A, Maksimova, A A, Baranov, A I, Uvarov, A V, Morozov, I A, Gudovskikh, A S
Format: Article
Language:English
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Description
Summary:In this work an application of selective contacts p-Si/MoOx for evaluation of silicon surface degradation is shown. Using a method of I-V measurements the effect of silicon surface degradation during SiO2 magnetron deposition was demonstrated.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1695/1/012084