Research of low noise pHEMT transistors in equipment for microwave radiometry using numerical simulation

The numerical impact modeling of some external effects on devices based on AlGAs/InGaAs/GaAs heterostructures (pHEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure in the barrier reg...

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-12, Vol.1695 (1), p.12150
Main Authors: Tikhomirov, V G, Gudkov, A G, Agasieva, S V, Yankevich, V B, Popov, M K, Chizhikov, S V
Format: Article
Language:English
Subjects:
Gallium arsenide
Heterostructures
Indium gallium arsenides
Low noise
Mathematical models
Microwave radiometers
Optimization
Physics
Radiometry
Transistors
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Summary:The numerical impact modeling of some external effects on devices based on AlGAs/InGaAs/GaAs heterostructures (pHEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure in the barrier region and to start the process of directed construction optimization of the devices based on AlGaAs/InGaAs/GaAs pHEMT with the aim of improving their noise characteristic.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1695/1/012150