Multiply GaAs quantum dots in AlGaAs nanowires: MBE growth and properties

A possibility of the AlGaAs nanowires with multiply GaAs QDs MBE growth on silicon substrates has been demonstrated. The morphological on optical properties of grown structures were studied.

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-12, Vol.1695 (1), p.12205
Main Authors: Reznik, R R, Kotlyar, K P, Khrebtov, A I, Samsonenko, Yu B, Shtrom, I V, Cirlin, G E
Format: Article
Language:English
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Description
Summary:A possibility of the AlGaAs nanowires with multiply GaAs QDs MBE growth on silicon substrates has been demonstrated. The morphological on optical properties of grown structures were studied.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1695/1/012205