Effect of IR irradiation on the various properties of chemically prepared zinc sulphide thin films

Zinc sulphide thin films have been deposited on glass substrate using simple low cost chemical bath deposition method at 80°C for 2 hours. One of the samples is post irradiated with infrared radiation for one hour. Structural, optical and morphological studies were done for both samples and the resu...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2020-12, Vol.1706 (1), p.12025
Main Authors: Ribin, K K, Navya, N, Naseema, K
Format: Article
Language:English
Subjects:
Glass substrates
Infrared radiation
Irradiation
Optoelectronics
Physics
Thin films
Zinc sulfide
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Zinc sulphide thin films have been deposited on glass substrate using simple low cost chemical bath deposition method at 80°C for 2 hours. One of the samples is post irradiated with infrared radiation for one hour. Structural, optical and morphological studies were done for both samples and the results were compared. XRD pattern of the IR irradiated sample shows enhanced crystallinity. Optical band gap was found to be 3.31eV for pure ZnS and 3.93 eV for the IR irradiated ZnS thin film. The films prepared by using this facile method are suitable for optoelectronic applications.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1706/1/012025