Prediction of radiation degradation of Si detectors irradiated by relativistic ions of different masses

The presented paper is focused around radiation damage of silicon material under the different ions irradiation. The ion total energy range is 0.7 GeV for 7 Li to 208 GeV for 208 Pb. The results of TRIM modeling for the set of six ions are presented. The extracted information about vacancy productio...

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Bibliographic Details
Published in:Journal of physics. Conference series 2021-11, Vol.2103 (1), p.12068
Main Authors: Mitina, D, Verbitskaya, E, Eremin, I, Fadeeva, N
Format: Article
Language:English
Online Access:Get full text
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Summary:The presented paper is focused around radiation damage of silicon material under the different ions irradiation. The ion total energy range is 0.7 GeV for 7 Li to 208 GeV for 208 Pb. The results of TRIM modeling for the set of six ions are presented. The extracted information about vacancy production allows making first assumptions of the Si degradation dependence on mass and energy of the incident ion.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2103/1/012068