Study of characteristics of LEDs based on InGaN/GaN quantum wells under short electric impacts accompanied by joule heating

Results are presented of a study of commercial blue and UV light-emitting diodes based on structures with InGaN/GaN quantum wells. An accelerated aging was provided by currents of 80 – 190 mA under a forward bias with duration not exceeding 3 h. The study demonstrated the possible rise in the extern...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2021-11, Vol.2103 (1), p.12189
Main Authors: Ivanov, A M, Klochkov, A V
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Results are presented of a study of commercial blue and UV light-emitting diodes based on structures with InGaN/GaN quantum wells. An accelerated aging was provided by currents of 80 – 190 mA under a forward bias with duration not exceeding 3 h. The study demonstrated the possible rise in the external quantum efficiency by 20% relative to that in the starting samples. The possible physical mechanisms responsible for the rise in the quantum efficiency and for the formation of a low-frequency current noise are presented.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2103/1/012189