INVESTIGATION OF VOLT-FARAD CHARACTERISTICS OF THIN MULTIFERRROIC FILMS

In this work, the influence of the concentration of manganese ions in BST films on the capacitance-voltage characteristics (CV characteristics, I–V characteristics, tgδ) of the Cu-Cr/BST/α-Al2O3 and Cu-Cr/BST/GGG structures was studied. To measure the electrophysical characteristics, multiferroic th...

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Bibliographic Details
Published in:Journal of physics. Conference series 2022-05, Vol.2270 (1), p.12020
Main Authors: Saidzoda, Q B, Semenov, A A, Safarov, M M
Format: Article
Language:English
Subjects:
Aluminum oxide
Capacitance-voltage characteristics
Chromium
Copper
Current voltage characteristics
Electrical properties
Manganese ions
Physics
Planar structures
Thin films
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Summary:In this work, the influence of the concentration of manganese ions in BST films on the capacitance-voltage characteristics (CV characteristics, I–V characteristics, tgδ) of the Cu-Cr/BST/α-Al2O3 and Cu-Cr/BST/GGG structures was studied. To measure the electrophysical characteristics, multiferroic thin-film the samples were made in the form of planar capacitors. Measurements of the electrical properties of the formed planar structures were carried out at a frequency of 1 MHz.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2270/1/012020