Enhancement of sub-terahertz detection by drain-to-source biasing on strained silicon MODFET devices

We report on non resonant detection of sub-terahertz radiation (148-353 GHz) using strained silicon modulation field effect transistor with different gate lengths. The devices were excited at room temperature by a Backward Wave Oscillator (BWO) source. Enhancement of the photoresponse signal by drai...

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Bibliographic Details
Published in:Journal of physics. Conference series 2015-10, Vol.647 (1), p.12007
Main Authors: Meziani, Y M, Morozov, S, Notario, J A Delgado, Maremyanin, K, Velázquez, J E, Fobelets, K
Format: Article
Language:English
Subjects:
Backward waves
Boundary conditions
Field effect transistors
Physics
Room temperature
Semiconductor devices
Silicon
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Summary:We report on non resonant detection of sub-terahertz radiation (148-353 GHz) using strained silicon modulation field effect transistor with different gate lengths. The devices were excited at room temperature by a Backward Wave Oscillator (BWO) source. Enhancement of the photoresponse signal by drain-to-source bias was observed. Increasing drain-to-source voltage leads to asymmetry between the boundary conditions at the source and drain contacts.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/647/1/012007