Defect studies of zirconia implanted by high energy Xe ions

• Published in: Journal of physics. Conference series 2016-01, Vol.674 (1), p.12016
• Main Authors: Melikhova, O, í ek, J, Procházka, I, Hruška, P, Skuratov, V A, Konstantinova, T E, Danilenko, I A
• Format: Article
• Language: English
• Subjects: Absorption spectra; Ceramics; Crystal defects; Implantation; Lattice vacancies; Optical measurement; Physics; Positron lifetime spectroscopy; Radiation effects; Service life assessment; Single crystals; Sintering; Yttria-stabilized zirconia; Yttrium oxide; Zirconium dioxide
• ISSN: 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/674/1/012016

In the present work positron lifetime spectroscopy was employed for characterization of radiation-induced defects in yttria stabilized zirconia (YSZ) implanted by 167 MeV Xe ions. Positron lifetime data were interpreted with aid of ab-initio theoretical modelling of defects in YSZ lattice. Damage caused by Xe implantation was investigated in two YSZ samples with different microstructure: (i) single crystal and (ii) sintered ceramic. The virgin YSZ single crystal exhibits single component spectrum with lifetime of ≈ 180 ps. Similar lifetime component was found also in the virgin sample of sintered YSZ ceramic. Since this lifetime is significantly higher than the YSZ bulk lifetime the virgin YSZ crystal and the sintered ceramic both contain vacancy-like defects. Xe implantation leads to appearance of additional defect component with longer lifetime ≈ 370 ps which comes obviously from vacancy clusters fonned by agglomeration of irradiation induced vacancies. A broad absorption band with peak absorption at ≈ 518 nm was found in Xe-implanted crystal by optical measurements.