Effect of a wideband heteroepitaxial emitter on dynamics of turn-off switching of high-voltage power GaAs p-i-n diodes

The possibility of improving the dynamic characteristics of turn-off switching of high-voltage power GaAs p-i-n diode by applying a heteroepitaxial AlGaAs emitter is investigated in this work. Using a wideband AlGaAs n+-emitter in manufacturing of power GaAs p-i-n diodes allows to vary the coefficie...

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Bibliographic Details
Published in:Journal of physics. Conference series 2016-02, Vol.690 (1), p.12038
Main Authors: Lebedeva, N M, Kozlov, V A, Soldatenkov, F Yu, Usikova, A A
Format: Article
Language:English
Subjects:
Aluminum gallium arsenides
Broadband
Diodes
Dynamic characteristics
Emitters
High voltages
Physics
PIN diodes
Recovery time
Softness
Switching
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Summary:The possibility of improving the dynamic characteristics of turn-off switching of high-voltage power GaAs p-i-n diode by applying a heteroepitaxial AlGaAs emitter is investigated in this work. Using a wideband AlGaAs n+-emitter in manufacturing of power GaAs p-i-n diodes allows to vary the coefficient K value which characterizes the recovery softness of diode blocking properties when switching off in the range of 0.1 to 2 or more. The diodes with blocking voltage of up to 700 V, the reverse recovery time of about 40 ns and K > 1 were manufactured.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/690/1/012038