Selectivity control of photosensitive structures based on gallium arsenide phosphide solid solutions by changing the rate of surface recombination

In this paper, we demonstrate the effect of surface recombination on spectral sensitivity of structures based on gallium arsenide phosphide solid solutions. Simulation of the effect for structures based on a p-n junction and a Schottky barrier was carried out. Photodetectors with different rates of...

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Bibliographic Details
Published in:Journal of physics. Conference series 2016-08, Vol.741 (1), p.12085
Main Authors: Tarasov, S A, Andreev, M Y, Lamkin, I A, Solomonov, A V
Format: Article
Language:English
Subjects:
Gallium arsenide
Gallium arsenide phosphide
Intermetallic compounds
P-n junctions
Photometers
Photosensitivity
Physics
Selectivity
Solid solutions
Spectral sensitivity
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Summary:In this paper, we demonstrate the effect of surface recombination on spectral sensitivity of structures based on gallium arsenide phosphide solid solutions. Simulation of the effect for structures based on a p-n junction and a Schottky barrier was carried out. Photodetectors with different rates of surface recombination were fabricated by using different methods of preliminary treatment of the semiconductor surface. We experimentally demonstrated the possibility to control photodetector selectivity by altering the rate of surface recombination. The full width at half maximum was reduced by almost 4 times, while a relatively small decrease in sensitivity at the maximum was observed.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/741/1/012085