Photoluminescence and infrared spectroscopy studies of thin Ge1-xSnx heterostructures

Elastically strained metastable GeSn layers with mole fraction of tin up to 0.15 was grown on (001) Si substrates with different misorientation. Photoluminescence spectra (PL) at room temperature and infrared (IR) spectroscopy spectra at helium temperature were measured. The direct edge of intrinsic...

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Bibliographic Details
Main Authors: Krivobok, V S, Aleshchenko, Yu A, Martovitsky, V M, Klekovkin, A V, Bazalevsky, M A, Mehiya, A B
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:Elastically strained metastable GeSn layers with mole fraction of tin up to 0.15 was grown on (001) Si substrates with different misorientation. Photoluminescence spectra (PL) at room temperature and infrared (IR) spectroscopy spectra at helium temperature were measured. The direct edge of intrinsic absorption in the region of 0.71-0.72 eV was observed in grown structures with a tin content of about 12-13%.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/816/1/012021