Effect of tungsten implantation on the switching parameters in V2O5 films

The paper examines the effect of doping with tungsten on switching in hydrated vanadium pentoxide films. The switching effect is associated with the metal-insulator transition in a vanadium dioxide channel that forms in the initial film due to the process of electrical forming (EF). Doping is carrie...

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-11, Vol.929 (1)
Main Authors: Burdyukh, S.V., Berezina, O.Ya, Pergament, A.L.
Format: Article
Language:English
Subjects:
Doping
Insulators
Ion implantation
Metal-insulator transition
Parameters
Physics
Switching
Tungsten
Vanadium dioxide
Vanadium pentoxide
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Summary:The paper examines the effect of doping with tungsten on switching in hydrated vanadium pentoxide films. The switching effect is associated with the metal-insulator transition in a vanadium dioxide channel that forms in the initial film due to the process of electrical forming (EF). Doping is carried out by the plasma immersion ion implantation method. It is shown that implanting small tungsten doses improves the switching parameters after EF. When implanting large doses, switching is observed without EF, and if EF is applied, the switching effect, on the contrary, disappears.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/929/1/012043