Temperature optimization of the Ti/Al/Ni/Au ohmic contact formation to the AlGaN/GaN heterostructure

This article is devoted to the experimental study of the ohmic contacts based on Ti/Al/Ni/Au metallization to the n+-doped region of the AlGaN / GaN heterostructure. Formed phases are studied at different temperatures. Based on the thermodynamic analysis of possible intermetallic reactions in the co...

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-12, Vol.938 (1), p.12072
Main Authors: Shostachenko, S A, Porokhonko, Y A, Zakharchenko, R V, Burdykin, M S, Ryzhuk, R V, Kargin, N I, Kalinin, B V, Belov, A A, Vasiliev, A N
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Contact resistance
Heterostructures
Metallizing
Nickel
Optimization
Physics
Titanium
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Summary:This article is devoted to the experimental study of the ohmic contacts based on Ti/Al/Ni/Au metallization to the n+-doped region of the AlGaN / GaN heterostructure. Formed phases are studied at different temperatures. Based on the thermodynamic analysis of possible intermetallic reactions in the contact region, the optimum temperature range was found for the formation of ohmic contacts with a low contact resistance. The optimality of the modeled range is experimentally confirmed.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/938/1/012072