Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt in...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2018-05, Vol.355 (1), p.12003
Main Authors: Sabanskis, A, Virbulis, J
Format: Article
Language:English
Subjects:
Conduction heating
Crystal defects
Crystal growth
Crystal pulling
Finite element method
Point defects
Silicon
Single crystals
Thermal radiation
Thermal stress
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Summary:Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/355/1/012003