Aspects of rf-heating and gas-phase doping of large scale silicon crystals grown by the Float Zone technique

Float Zone growth of silicon crystals is known as the method for providing excellent material properties. Basic principle of this technique is the radiofrequency induction heating, main aspects of this method will be discussed in this article. In contrast to other methods, one of the advantages of t...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2018-05, Vol.355 (1), p.12006
Main Authors: Zobel, F, Mosel, F, Sørensen, J, Dold, P
Format: Article
Language:English
Subjects:
Crystal growth
Crystals
Doping
Float zones
Induction heating
Material properties
Radio frequency
Silicon
Vapor phases
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Summary:Float Zone growth of silicon crystals is known as the method for providing excellent material properties. Basic principle of this technique is the radiofrequency induction heating, main aspects of this method will be discussed in this article. In contrast to other methods, one of the advantages of the Float Zone technique is the possibility for in-situ doping via gas phase. Experimental results on this topic will be shown and discussed.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/355/1/012006