Effect of Substrate Orientation on the Growth Direction of InxGa1-xAs Nanowires (NWs)

We have grown the InxGal-xAs NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on GaAs(l00), wh...

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Main Authors: Wibowo, E, Ulya, N, Othaman, Z, Marwoto, P, Sumpono, I, Aji, M P, Sulhadi, Astuti, B, Rokhmat, M, Suwandi, Ismardi, A, Sutisna
Format: Conference Proceeding
Language:English
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Summary:We have grown the InxGal-xAs NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on GaAs(l00), while kinks NWs were perceived on Si(lll). We found that the growth direction of the InxGal-xAs NWs can be easily controlled using certain orientation of the substrate by considering its lattice mismatch and its surface energy.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/395/1/012003