Investigation of semiconducting materials for magnetic field sensors in strong magnetic fields under cryogenic temperatures

Influence of strong magnetic fields B ˃ 3 T under cryogenic temperatures (1.5 ÷ 4.2) K on the signals of Hall sensors based on single-crystal whiskers (InSb, InAs) and nano-sized heterostructures (InSb/i-GaAs, InAs/i-GaAs) have been investigated. There are distinct Shubnikov - de Haas oscillations f...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2019-02, Vol.475 (1), p.12015
Main Authors: Vasil'evskii, I, Vinichenko, A, Strikhanov, M, Kargin, N, Kuech, T, Rogacki, K, Bolshakova, I, Kost, Ya, Moroz, A, Shurygin, F, Vasyliev, A, Radishevskiy, M
Format: Article
Language:English
Subjects:
Cryogenic engineering
Cryogenic temperature
Crystal defects
Fusion reactors
Hall effect
Heterostructures
Indium antimonide
Indium arsenides
Intermetallic compounds
Magnetic fields
Particle accelerators
Sensors
Single crystals
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Summary:Influence of strong magnetic fields B ˃ 3 T under cryogenic temperatures (1.5 ÷ 4.2) K on the signals of Hall sensors based on single-crystal whiskers (InSb, InAs) and nano-sized heterostructures (InSb/i-GaAs, InAs/i-GaAs) have been investigated. There are distinct Shubnikov - de Haas oscillations for whisker-based sensors, whereas heterostructures-based sensors demonstrate the linear field dependence of the output signal. This difference explained by the higher concentration of structure defects in the heterostructures. The derived results confirm the operability of Hall sensors based on indicated heterostructures for the magnetic fields diagnostics in the temperature and field conditions of modern particle accelerators and fusion reactors.
ISSN:1757-8981
1757-899X
1757-899X
DOI:10.1088/1757-899X/475/1/012015