Integrated cryogenic resistors formed from NbN thin film under ion beam irradiation

Niobium nitride ultrathin films were synthesized by cathode sputtering technique. The cryogenic resistors built in the superconducting nanowire were formed using the radiation technology developed in National Research Centre "Kurchatov Institute". This technique was based on the transforma...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2019-12, Vol.699 (1), p.12016
Main Authors: Gurovich, B A, Goncharov, B V, Dementyeva, M M, Prikhodko, K E, Kutuzov, L V, Komarov, D A, Domantovsky, A G
Format: Article
Language:English
Subjects:
Cathode sputtering
Cryoforming
Ion beams
Irradiation
Nanowires
Niobium nitride
Research facilities
Resistors
Superconductivity
Thin films
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Summary:Niobium nitride ultrathin films were synthesized by cathode sputtering technique. The cryogenic resistors built in the superconducting nanowire were formed using the radiation technology developed in National Research Centre "Kurchatov Institute". This technique was based on the transformation of NbN superconducting film to a normal state (at 4.2K) under the composite ion beam irradiation through the resistive mask. The formation of the cryogenic resistors in the broad range of values was demonstrated.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/699/1/012016