Technology for the formation of refractory metals for micro- and nanoelectronics products

Metal silicides play a significant role in the preparation of ohmic contacts and Schottky barriers on silicon. The formation of ohmic contacts is carried out by applying a metal film with a thickness of ∼ 100 nm to silicon, followed by annealing at temperatures of 400-600 °C, as a result of which th...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2020-08, Vol.905 (1), p.12048
Main Authors: Mustafaev, G A, Khasanov, A I, Cherkesova, N V, Mustafaev, A G
Format: Article
Language:English
Subjects:
Contact resistance
Intermetallic compounds
Ion bombardment
Ion implantation
Metal silicides
Nanoelectronics
Nickel silicide
Nitrogen ions
Radiation dosage
Refractory metals
Silicon
Thickness
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Summary:Metal silicides play a significant role in the preparation of ohmic contacts and Schottky barriers on silicon. The formation of ohmic contacts is carried out by applying a metal film with a thickness of ∼ 100 nm to silicon, followed by annealing at temperatures of 400-600 °C, as a result of which there is a reaction between silicon and metal with the formation of silicide. With this technology, silicon diffusion leads to instability of devices. In this regard, the authors developed an improved technology for the formation of silicides of refractory metals to obtain ohmic contacts. Ion implantation allows, due to ionic mixing, forming nickel silicide on the surface of the samples when heated. It is important that, with an increase in the radiation dose, the formation of Ni2Si silicide slows down. This effect can be explained by the formation of a dielectric Ni3Si2. Similar phenomena were observed during the bombardment by oxygen and nitrogen ions.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/905/1/012048