Exchange bias controlled antisymmetric-symmetric magnetoresistances in Fe3GeTe2/graphite/Fe3GeTe2 trilayer

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Bibliographic Details
Published in:2d materials 2023-04, Vol.10 (2)
Main Authors: Wu, Qingmei, Cui, Zhangzhang, Zhu, Mo, Jiang, Zhongyuan, Fu, Zhengping, Lu, Yalin
Format: Article
Language:English
Subjects:
2D magnetism
antisymmetric magnetoresistance
exchange bias
heterojunctions
multi-bit memory
Online Access:Get full text
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ISSN:2053-1583
DOI:10.1088/2053-1583/acb069