Atomic layer deposition of MoS2 thin films

Atomic layer deposition (ALD) was used to grow thin films of MoS2 over 5 × 5 cm areas of silicon oxide coated silicon wafers. Smooth, uniform, and continuous films were produced over a temperature range of 350 °C-450 °C. The as-grown films were analyzed using x-ray photoelectron spectroscopy, Raman...

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Bibliographic Details
Published in:Materials research express 2015-03, Vol.2 (3)
Main Authors: Browning, Robert, Padigi, Prasanna, Solanki, Raj, Tweet, Douglas J, Schuele, Paul, Evans, David
Format: Article
Language:English
Subjects:
2D transition metal chalcogenides
atomic layered deposition
MoS
transistor
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Summary:Atomic layer deposition (ALD) was used to grow thin films of MoS2 over 5 × 5 cm areas of silicon oxide coated silicon wafers. Smooth, uniform, and continuous films were produced over a temperature range of 350 °C-450 °C. The as-grown films were analyzed using x-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence, and x-ray diffraction. Electrical characteristics of the films were evaluated by fabricating a back gated field effect transistor. These analyses indicate that ALD technique can produce large area, high quality MoS2 films.
ISSN:2053-1591
DOI:10.1088/2053-1591/2/3/035006