Enhancing photo-detection properties of Sb0.15Sn0.85S2 alloy

Alloy engineering is a potential technique in producing a high performance optoelectronic device. Single crystals of Sb0.15Sn0.85S2 ternary alloys are grown by technique of direct vapour transport. As-grown crystals are used to fabricate metal-semiconductor-metal device for photodetection. The photo...

Full description

Saved in:
Bibliographic Details
Published in:Materials research express 2019-07, Vol.6 (9)
Main Authors: Khimani, Ankurkumar J, Chaki, Sunil H, Hirpara, Anilkumar B, Patel, Rakesh V, Deshpande, M P
Format: Article
Language:English
Subjects:
crystal growth
direct vapour transport
photodetection
semiconductors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page
container_issue 9
container_start_page
container_title Materials research express
container_volume 6
creator Khimani, Ankurkumar J
Chaki, Sunil H
Hirpara, Anilkumar B
Patel, Rakesh V
Deshpande, M P
description Alloy engineering is a potential technique in producing a high performance optoelectronic device. Single crystals of Sb0.15Sn0.85S2 ternary alloys are grown by technique of direct vapour transport. As-grown crystals are used to fabricate metal-semiconductor-metal device for photodetection. The photodetector exhibits consistent performance and good reproducibility towards light. Moreover, it shows proficient sensitivity towards the bias voltages ranging from 5 V to 50 V under white light of 80 mW cm−2 intensity. The detector is exploited for its photoresponse at a fixed intensity of 0.3 mW cm−2 for different illumination wavelengths (480 nm, 570 nm and 670 nm) and thicknesses (20 m, 15 m and 11 m). The results showed highest photo-response for 480 nm illumination. The present findings showed the detector demonstrated excellent performance under various illuminations at different bias voltages an essential need for high performance device. The study can provide innovative direction to future optoelectronics devices.
doi_str_mv 10.1088/2053-1591/ab2cea
format article
fullrecord <record><control><sourceid>iop</sourceid><recordid>TN_cdi_iop_journals_10_1088_2053_1591_ab2cea</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>mrxab2cea</sourcerecordid><originalsourceid>FETCH-LOGICAL-i223t-8db2b7a2b3abf85dd65aa32ba66c8f3450b8fbbefed2d2843c7c57319b8f98dd3</originalsourceid><addsrcrecordid>eNptkM9LwzAYhoMgOObuHnvyZLfk-5Y0AS8yphMGHqrnkJ-uoyalraD_vR0TT55eeHl5XngIuWF0yaiUK6AcS8YVWxkLLpgLMvurrshiGI6UUqgUchAzcr9NB5Nck96L7pDHXPowBjc2ORVdn7vQj00YihyL2k58Xie6lLyGwrRt_r4ml9G0Q1j85py8PW5fN7ty__L0vHnYlw0AjqX0FmxlwKKxUXLvBTcGwRohnIy45tTKaG2IwYMHuUZXOV4hU1OtpPc4J7dnbpM7fcyffZre9Ef_pYVWmiqBFHXn4zS8-2fIqD6Z0ScN-qRBn83gD0UxWEo</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Enhancing photo-detection properties of Sb0.15Sn0.85S2 alloy</title><source>Institute of Physics</source><creator>Khimani, Ankurkumar J ; Chaki, Sunil H ; Hirpara, Anilkumar B ; Patel, Rakesh V ; Deshpande, M P</creator><creatorcontrib>Khimani, Ankurkumar J ; Chaki, Sunil H ; Hirpara, Anilkumar B ; Patel, Rakesh V ; Deshpande, M P</creatorcontrib><description>Alloy engineering is a potential technique in producing a high performance optoelectronic device. Single crystals of Sb0.15Sn0.85S2 ternary alloys are grown by technique of direct vapour transport. As-grown crystals are used to fabricate metal-semiconductor-metal device for photodetection. The photodetector exhibits consistent performance and good reproducibility towards light. Moreover, it shows proficient sensitivity towards the bias voltages ranging from 5 V to 50 V under white light of 80 mW cm−2 intensity. The detector is exploited for its photoresponse at a fixed intensity of 0.3 mW cm−2 for different illumination wavelengths (480 nm, 570 nm and 670 nm) and thicknesses (20 m, 15 m and 11 m). The results showed highest photo-response for 480 nm illumination. The present findings showed the detector demonstrated excellent performance under various illuminations at different bias voltages an essential need for high performance device. The study can provide innovative direction to future optoelectronics devices.</description><identifier>EISSN: 2053-1591</identifier><identifier>DOI: 10.1088/2053-1591/ab2cea</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>crystal growth ; direct vapour transport ; photodetection ; semiconductors</subject><ispartof>Materials research express, 2019-07, Vol.6 (9)</ispartof><rights>2019 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-5956-9574</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Khimani, Ankurkumar J</creatorcontrib><creatorcontrib>Chaki, Sunil H</creatorcontrib><creatorcontrib>Hirpara, Anilkumar B</creatorcontrib><creatorcontrib>Patel, Rakesh V</creatorcontrib><creatorcontrib>Deshpande, M P</creatorcontrib><title>Enhancing photo-detection properties of Sb0.15Sn0.85S2 alloy</title><title>Materials research express</title><addtitle>MRX</addtitle><addtitle>Mater. Res. Express</addtitle><description>Alloy engineering is a potential technique in producing a high performance optoelectronic device. Single crystals of Sb0.15Sn0.85S2 ternary alloys are grown by technique of direct vapour transport. As-grown crystals are used to fabricate metal-semiconductor-metal device for photodetection. The photodetector exhibits consistent performance and good reproducibility towards light. Moreover, it shows proficient sensitivity towards the bias voltages ranging from 5 V to 50 V under white light of 80 mW cm−2 intensity. The detector is exploited for its photoresponse at a fixed intensity of 0.3 mW cm−2 for different illumination wavelengths (480 nm, 570 nm and 670 nm) and thicknesses (20 m, 15 m and 11 m). The results showed highest photo-response for 480 nm illumination. The present findings showed the detector demonstrated excellent performance under various illuminations at different bias voltages an essential need for high performance device. The study can provide innovative direction to future optoelectronics devices.</description><subject>crystal growth</subject><subject>direct vapour transport</subject><subject>photodetection</subject><subject>semiconductors</subject><issn>2053-1591</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNptkM9LwzAYhoMgOObuHnvyZLfk-5Y0AS8yphMGHqrnkJ-uoyalraD_vR0TT55eeHl5XngIuWF0yaiUK6AcS8YVWxkLLpgLMvurrshiGI6UUqgUchAzcr9NB5Nck96L7pDHXPowBjc2ORVdn7vQj00YihyL2k58Xie6lLyGwrRt_r4ml9G0Q1j85py8PW5fN7ty__L0vHnYlw0AjqX0FmxlwKKxUXLvBTcGwRohnIy45tTKaG2IwYMHuUZXOV4hU1OtpPc4J7dnbpM7fcyffZre9Ef_pYVWmiqBFHXn4zS8-2fIqD6Z0ScN-qRBn83gD0UxWEo</recordid><startdate>20190703</startdate><enddate>20190703</enddate><creator>Khimani, Ankurkumar J</creator><creator>Chaki, Sunil H</creator><creator>Hirpara, Anilkumar B</creator><creator>Patel, Rakesh V</creator><creator>Deshpande, M P</creator><general>IOP Publishing</general><scope/><orcidid>https://orcid.org/0000-0001-5956-9574</orcidid></search><sort><creationdate>20190703</creationdate><title>Enhancing photo-detection properties of Sb0.15Sn0.85S2 alloy</title><author>Khimani, Ankurkumar J ; Chaki, Sunil H ; Hirpara, Anilkumar B ; Patel, Rakesh V ; Deshpande, M P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i223t-8db2b7a2b3abf85dd65aa32ba66c8f3450b8fbbefed2d2843c7c57319b8f98dd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>crystal growth</topic><topic>direct vapour transport</topic><topic>photodetection</topic><topic>semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khimani, Ankurkumar J</creatorcontrib><creatorcontrib>Chaki, Sunil H</creatorcontrib><creatorcontrib>Hirpara, Anilkumar B</creatorcontrib><creatorcontrib>Patel, Rakesh V</creatorcontrib><creatorcontrib>Deshpande, M P</creatorcontrib><jtitle>Materials research express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khimani, Ankurkumar J</au><au>Chaki, Sunil H</au><au>Hirpara, Anilkumar B</au><au>Patel, Rakesh V</au><au>Deshpande, M P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancing photo-detection properties of Sb0.15Sn0.85S2 alloy</atitle><jtitle>Materials research express</jtitle><stitle>MRX</stitle><addtitle>Mater. Res. Express</addtitle><date>2019-07-03</date><risdate>2019</risdate><volume>6</volume><issue>9</issue><eissn>2053-1591</eissn><abstract>Alloy engineering is a potential technique in producing a high performance optoelectronic device. Single crystals of Sb0.15Sn0.85S2 ternary alloys are grown by technique of direct vapour transport. As-grown crystals are used to fabricate metal-semiconductor-metal device for photodetection. The photodetector exhibits consistent performance and good reproducibility towards light. Moreover, it shows proficient sensitivity towards the bias voltages ranging from 5 V to 50 V under white light of 80 mW cm−2 intensity. The detector is exploited for its photoresponse at a fixed intensity of 0.3 mW cm−2 for different illumination wavelengths (480 nm, 570 nm and 670 nm) and thicknesses (20 m, 15 m and 11 m). The results showed highest photo-response for 480 nm illumination. The present findings showed the detector demonstrated excellent performance under various illuminations at different bias voltages an essential need for high performance device. The study can provide innovative direction to future optoelectronics devices.</abstract><pub>IOP Publishing</pub><doi>10.1088/2053-1591/ab2cea</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-5956-9574</orcidid></addata></record>
fulltext fulltext
identifier EISSN: 2053-1591
ispartof Materials research express, 2019-07, Vol.6 (9)
issn 2053-1591
language eng
recordid cdi_iop_journals_10_1088_2053_1591_ab2cea
source Institute of Physics
subjects crystal growth
direct vapour transport
photodetection
semiconductors
title Enhancing photo-detection properties of Sb0.15Sn0.85S2 alloy
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T16%3A22%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhancing%20photo-detection%20properties%20of%20Sb0.15Sn0.85S2%20alloy&rft.jtitle=Materials%20research%20express&rft.au=Khimani,%20Ankurkumar%20J&rft.date=2019-07-03&rft.volume=6&rft.issue=9&rft.eissn=2053-1591&rft_id=info:doi/10.1088/2053-1591/ab2cea&rft_dat=%3Ciop%3Emrxab2cea%3C/iop%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i223t-8db2b7a2b3abf85dd65aa32ba66c8f3450b8fbbefed2d2843c7c57319b8f98dd3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true